MOCVD growth of high quality GaN-AlGaN based structures on Al2O3 substrates with dislocation density less than 107 cm-2

P. Kung, X. Zhang, A. Saxler, D. Walker, M. Razeghi*, W. Qian, V. P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report the MOCVD growth of high quality GaN/AlGaN heterostructures on (00 • 1) sapphire substrates with a density of screw and mixed dislocations less than ∼ 107 cm-2. 50 Å-GaN/100 Å-AlGaN superlattices have been grown with atomically sharp interfaces, as determined through high resolution TEM. Published by Elsevier Science Limited.

Original languageEnglish (US)
Pages (from-to)1781-1785
Number of pages5
JournalJournal of the European Ceramic Society
Volume17
Issue number15-16
DOIs
StatePublished - 1997

Funding

The authorsw ish to expresst heir specialt hankst o M. Yoder, Y.-S. Park and C. Wood at the Officeo f Naval Research,a s well as A. Husain at DARPA for their permanent support and interest. The authorsw ould also like to thank G. Brown and W. Mitchel at Wright Laboratory for their constant encouragement. AIXTRON Semiconductor GmbH is acknowledgedfo r technicals upport.T his work is partly supportedb y the Ballistic Missile Defense Organization under ONR Grant No. 00014-93-l-0235V.. P. Dravid acknowledgest he support of the NSF-NY1 program (Grant No. DMR-935751 3).

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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