MOCVD growth of high quality GaN-AlGaN based structures on Al2O3 substrates with dislocation density less than 107 cm-2

P. Kung, X. Zhang, A. Saxler, D. Walker, M. Razeghi*, W. Qian, V. P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report the MOCVD growth of high quality GaN/AlGaN heterostructures on (00 • 1) sapphire substrates with a density of screw and mixed dislocations less than ∼ 107 cm-2. 50 Å-GaN/100 Å-AlGaN superlattices have been grown with atomically sharp interfaces, as determined through high resolution TEM. Published by Elsevier Science Limited.

Original languageEnglish (US)
Pages (from-to)1781-1785
Number of pages5
JournalJournal of the European Ceramic Society
Volume17
Issue number15-16
DOIs
StatePublished - 1997

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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