MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices

M. Razeghi; P. Maurel; M. Defour; F. Omnes; O. Acher

MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices

M. Razeghi^*, P. Maurel, M. Defour, F. Omnes, O. Acher

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

LP-MOCVD appears very suitable for growing high quality InP/Ga_xIn_1-xAs_yP_1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.

Original language	English (US)
Pages (from-to)	74-82
Number of pages	9
Journal	IEE Conference Publication
Issue number	292 pt 2
State	Published - Dec 1 1988

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{b950129c161846f7bd5ec1ed37a10337,

title = "MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices",

abstract = "LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.",

author = "M. Razeghi and P. Maurel and M. Defour and F. Omnes and O. Acher",

year = "1988",

month = dec,

day = "1",

language = "English (US)",

pages = "74--82",

journal = "IEE Conference Publication",

issn = "0537-9989",

publisher = "Institution of Engineering and Technology",

number = "292 pt 2",

}

TY - JOUR

T1 - MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices

AU - Razeghi, M.

AU - Maurel, P.

AU - Defour, M.

AU - Omnes, F.

AU - Acher, O.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.

AB - LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0024131069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024131069&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024131069

SN - 0537-9989

SP - 74

EP - 82

JO - IEE Conference Publication

JF - IEE Conference Publication

IS - 292 pt 2

ER -

MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices

Abstract

ASJC Scopus subject areas

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