LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.
|Original language||English (US)|
|Number of pages||9|
|Journal||IEE Conference Publication|
|Issue number||292 pt 2|
|State||Published - Dec 1 1988|
ASJC Scopus subject areas
- Electrical and Electronic Engineering