Abstract
LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.
Original language | English (US) |
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Pages (from-to) | 74-82 |
Number of pages | 9 |
Journal | IEE Conference Publication |
Issue number | 292 pt 2 |
State | Published - Dec 1 1988 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering