MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices

M. Razeghi*, P. Maurel, M. Defour, F. Omnes, O. Acher

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

LP-MOCVD appears very suitable for growing high quality InP/GaxIn1-xAsyP1-y heterostructures on silicon substrate. Various devices such as GaInAsP/InP light emitting diodes, λ = 1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodectors have been produced for the first time.

Original languageEnglish (US)
Pages (from-to)74-82
Number of pages9
JournalIEE Conference Publication
Issue number292 pt 2
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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