The growth of Cd2SnO4 by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O2. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.
|Original language||English (US)|
|Number of pages||4|
|Journal||Chemical Vapor Deposition|
|State||Published - Dec 2004|
ASJC Scopus subject areas
- Surfaces and Interfaces
- Process Chemistry and Technology