MOCVD growth of transparent conducting Cd2SnO4 thin films

Andrew W. Metz; Melissa A. Lane; Carl R. Kannewurf; Kenneth R. Poeppelmeier; Tobin J. Marks

doi:10.1002/cvde.200304177

MOCVD growth of transparent conducting Cd₂SnO₄ thin films

Andrew W. Metz^*, Melissa A. Lane, Carl R. Kannewurf, Kenneth R. Poeppelmeier, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The growth of Cd₂SnO₄ by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O₂. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.

Original language	English (US)
Pages (from-to)	297-300
Number of pages	4
Journal	Chemical Vapor Deposition
Volume	10
Issue number	6
DOIs	https://doi.org/10.1002/cvde.200304177
State	Published - Dec 2004

ASJC Scopus subject areas

General Chemistry
Surfaces and Interfaces
Process Chemistry and Technology

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10.1002/cvde.200304177

Cite this

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abstract = "The growth of Cd2SnO4 by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O2. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.",

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AU - Lane, Melissa A.

AU - Kannewurf, Carl R.

AU - Poeppelmeier, Kenneth R.

AU - Marks, Tobin J.

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AB - The growth of Cd2SnO4 by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O2. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.

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