MOCVD of epitaxial BaTiO3 films using a liquid barium precursor

A. R. Teren, J. A. Belot, N. L. Edleman, T. J. Marks, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

Abstract

The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).

Original languageEnglish (US)
Pages (from-to)175-177
Number of pages3
JournalAdvanced Materials
Volume12
Issue number15
StatePublished - Aug 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'MOCVD of epitaxial BaTiO<sub>3</sub> films using a liquid barium precursor'. Together they form a unique fingerprint.

Cite this