The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).
|Original language||English (US)|
|Number of pages||3|
|State||Published - Aug 1 2000|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering