MOCVD of epitaxial BaTiO3 films using a liquid barium precursor

A. R. Teren; J. A. Belot; N. L. Edleman; T. J. Marks; B. W. Wessels

MOCVD of epitaxial BaTiO₃ films using a liquid barium precursor

A. R. Teren, J. A. Belot, N. L. Edleman, T. J. Marks, B. W. Wessels

Research output: Contribution to journal › Article › peer-review

Abstract

The deposition of high quality BaTiO₃ films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO₃ on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)₂·pentaethyleneglycol ethyl butyl ether [Ba(hfa)₂·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)₂·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).

Original language	English (US)
Pages (from-to)	175-177
Number of pages	3
Journal	Advanced Materials
Volume	12
Issue number	15
State	Published - Aug 2000

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "MOCVD of epitaxial BaTiO3 films using a liquid barium precursor",

abstract = "The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).",

author = "Teren, {A. R.} and Belot, {J. A.} and Edleman, {N. L.} and Marks, {T. J.} and Wessels, {B. W.}",

year = "2000",

month = aug,

language = "English (US)",

volume = "12",

pages = "175--177",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - MOCVD of epitaxial BaTiO3 films using a liquid barium precursor

AU - Teren, A. R.

AU - Belot, J. A.

AU - Edleman, N. L.

AU - Marks, T. J.

AU - Wessels, B. W.

PY - 2000/8

Y1 - 2000/8

N2 - The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).

AB - The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).

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M3 - Article

AN - SCOPUS:0034248255

SN - 0935-9648

VL - 12

SP - 175

EP - 177

JO - Advanced Materials

JF - Advanced Materials

IS - 15

ER -

MOCVD of epitaxial BaTiO₃ films using a liquid barium precursor

Abstract

ASJC Scopus subject areas

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