MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

B. J. Hinds; R. J. McNeely; J. Chen; C. Dias; D. L. Studebaker; T. J. Marks; T. P. Hogan; J. L. Schindler; C. R. Kannewurf

doi:10.1016/S0925-8388(96)02701-6

MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

B. J. Hinds, R. J. McNeely, J. Chen, C. Dias, D. L. Studebaker, T. J. Marks^*, T. P. Hogan, J. L. Schindler, C. R. Kannewurf

^*Corresponding author for this work

Chemistry

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2 Scopus citations

Abstract

The suitability of Tl₂Ba₂CaCu₂O₈ (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO₃, by MOCVD using Mg(dpm)₂ (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O₂ partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO₃ by MOCVD using Ba(hfa)₂·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)₂ tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)₂ precursors and are then post-annealed in the presence of bulk Tl₂Ba₂CaCu₂O₈ to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl₂O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (T_c∼105 K).

Original language	English (US)
Pages (from-to)	328-331
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	251
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-8388(96)02701-6
State	Published - Apr 1997

Funding

This research was supported by the NSF through the Science and Technology Center for Superconductivity (Grant No. DMR 9120000) and by NSF/ONR/ARPA (CHE-9421910/N 00014-95-1-0717).

Keywords

Devices
Dielectrics
MOCVD
Multilayer
Tl-2212

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/S0925-8388(96)02701-6

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@article{73cd02307273426795d5898f0c876e44,

title = "MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties",

abstract = "The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).",

keywords = "Devices, Dielectrics, MOCVD, Multilayer, Tl-2212",

author = "Hinds, {B. J.} and McNeely, {R. J.} and J. Chen and C. Dias and Studebaker, {D. L.} and Marks, {T. J.} and Hogan, {T. P.} and Schindler, {J. L.} and Kannewurf, {C. R.}",

note = "Funding Information: This research was supported by the NSF through the Science and Technology Center for Superconductivity (Grant No. DMR 9120000) and by NSF/ONR/ARPA (CHE-9421910/N 00014-95-1-0717).",

year = "1997",

month = apr,

doi = "10.1016/S0925-8388(96)02701-6",

language = "English (US)",

volume = "251",

pages = "328--331",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1-2",

}

TY - JOUR

T1 - MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

AU - Hinds, B. J.

AU - McNeely, R. J.

AU - Chen, J.

AU - Dias, C.

AU - Studebaker, D. L.

AU - Marks, T. J.

AU - Hogan, T. P.

AU - Schindler, J. L.

AU - Kannewurf, C. R.

N1 - Funding Information: This research was supported by the NSF through the Science and Technology Center for Superconductivity (Grant No. DMR 9120000) and by NSF/ONR/ARPA (CHE-9421910/N 00014-95-1-0717).

PY - 1997/4

Y1 - 1997/4

N2 - The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).

AB - The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).

KW - Devices

KW - Dielectrics

KW - MOCVD

KW - Multilayer

KW - Tl-2212

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U2 - 10.1016/S0925-8388(96)02701-6

DO - 10.1016/S0925-8388(96)02701-6

M3 - Article

AN - SCOPUS:0031124756

SN - 0925-8388

VL - 251

SP - 328

EP - 331

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

Abstract

Funding

Keywords

ASJC Scopus subject areas

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