Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

Farah Fahim, Grzegorz W. Deptuch, James R. Hoff, Hooman Mohseni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

Original languageEnglish (US)
Title of host publicationOptical Sensing, Imaging, and Photon Counting
Subtitle of host publicationNanostructured Devices and Applications
EditorsGail J. Brown, Manijeh Razeghi, Dorota S. Temple
PublisherSPIE
ISBN (Electronic)9781628417210
DOIs
StatePublished - Jan 1 2015
EventOptical Sensing, Imaging, and Photon Counting - San Diego, United States
Duration: Aug 11 2015Aug 13 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9555
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOptical Sensing, Imaging, and Photon Counting
CountryUnited States
CitySan Diego
Period8/11/158/13/15

Keywords

  • Modeling
  • Parasitic extraction
  • Readout ASIC
  • Simulations.
  • pixel detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Fahim, F., Deptuch, G. W., Hoff, J. R., & Mohseni, H. (2015). Modeling and analysis of hybrid pixel detector deficiencies for scientific applications. In G. J. Brown, M. Razeghi, & D. S. Temple (Eds.), Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications [955517] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9555). SPIE. https://doi.org/10.1117/12.2188128