Modeling and analysis of leakage induced damping effect in low voltage LSIs

Gu Jie; John Keane; Chris Kim

doi:10.1145/1165573.1165668

Modeling and analysis of leakage induced damping effect in low voltage LSIs

Gu Jie^*, John Keane, Chris Kim

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Although there has been extensive research on controlling leakage power, the fact that leaky transistors can act as a damping element for supply noise has been long ignored or unnoticed in the design community. This paper investigates the leakage induced damping effect that helps suppress the supply noise. By developing physics-based impedance models for active and leakage currents, we show that leakage, particularly gate tunneling leakage, provides more damping than strong-inversion current. Simulations were performed in a 32nm CMOS technology to validate our models under PVT variations and to explore the voltage dependent behavior of this phenomenon. Design example utilizing leakage induced damping such as decap assignment is discussed with results showing 15.6% saving in decap area.

Original language	English (US)
Title of host publication	ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design
Pages	382-387
Number of pages	6
Volume	2006
DOIs	https://doi.org/10.1145/1165573.1165668
State	Published - Dec 1 2006
Event	ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design - Tegernsee, Bavaria, Germany Duration: Oct 4 2006 → Oct 6 2006

Other

Other	ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design
Country/Territory	Germany
City	Tegernsee, Bavaria
Period	10/4/06 → 10/6/06

Keywords

Damping effect
Gate leakage
Subthreshold leakage
Supply noise

ASJC Scopus subject areas

General Engineering

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10.1145/1165573.1165668

Cite this

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title = "Modeling and analysis of leakage induced damping effect in low voltage LSIs",

abstract = "Although there has been extensive research on controlling leakage power, the fact that leaky transistors can act as a damping element for supply noise has been long ignored or unnoticed in the design community. This paper investigates the leakage induced damping effect that helps suppress the supply noise. By developing physics-based impedance models for active and leakage currents, we show that leakage, particularly gate tunneling leakage, provides more damping than strong-inversion current. Simulations were performed in a 32nm CMOS technology to validate our models under PVT variations and to explore the voltage dependent behavior of this phenomenon. Design example utilizing leakage induced damping such as decap assignment is discussed with results showing 15.6% saving in decap area.",

keywords = "Damping effect, Gate leakage, Subthreshold leakage, Supply noise",

author = "Gu Jie and John Keane and Chris Kim",

year = "2006",

month = dec,

day = "1",

doi = "10.1145/1165573.1165668",

language = "English (US)",

isbn = "1595934626",

volume = "2006",

pages = "382--387",

booktitle = "ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design",

note = "ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design ; Conference date: 04-10-2006 Through 06-10-2006",

}

Jie, G, Keane, J & Kim, C 2006, Modeling and analysis of leakage induced damping effect in low voltage LSIs. in ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design. vol. 2006, pp. 382-387, ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design, Tegernsee, Bavaria, Germany, 10/4/06. https://doi.org/10.1145/1165573.1165668

TY - GEN

T1 - Modeling and analysis of leakage induced damping effect in low voltage LSIs

AU - Jie, Gu

AU - Keane, John

AU - Kim, Chris

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Although there has been extensive research on controlling leakage power, the fact that leaky transistors can act as a damping element for supply noise has been long ignored or unnoticed in the design community. This paper investigates the leakage induced damping effect that helps suppress the supply noise. By developing physics-based impedance models for active and leakage currents, we show that leakage, particularly gate tunneling leakage, provides more damping than strong-inversion current. Simulations were performed in a 32nm CMOS technology to validate our models under PVT variations and to explore the voltage dependent behavior of this phenomenon. Design example utilizing leakage induced damping such as decap assignment is discussed with results showing 15.6% saving in decap area.

AB - Although there has been extensive research on controlling leakage power, the fact that leaky transistors can act as a damping element for supply noise has been long ignored or unnoticed in the design community. This paper investigates the leakage induced damping effect that helps suppress the supply noise. By developing physics-based impedance models for active and leakage currents, we show that leakage, particularly gate tunneling leakage, provides more damping than strong-inversion current. Simulations were performed in a 32nm CMOS technology to validate our models under PVT variations and to explore the voltage dependent behavior of this phenomenon. Design example utilizing leakage induced damping such as decap assignment is discussed with results showing 15.6% saving in decap area.

KW - Damping effect

KW - Gate leakage

KW - Subthreshold leakage

KW - Supply noise

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U2 - 10.1145/1165573.1165668

DO - 10.1145/1165573.1165668

M3 - Conference contribution

AN - SCOPUS:34247226038

SN - 1595934626

SN - 9781595934628

VL - 2006

SP - 382

EP - 387

BT - ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design

T2 - ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design

Y2 - 4 October 2006 through 6 October 2006

ER -

Modeling and analysis of leakage induced damping effect in low voltage LSIs

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Keywords

ASJC Scopus subject areas

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