Modeling and fabrication of electrically tunable quantum dot intersubband devices

Wei Wu*, Dibyendu Dey, Omer G. Memis, Hooman Mohseni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We propose an idea of forming quantum dot intersubband transition devices based on lateral electrical confinement on quantum wells. Numerical simulations show that the energy level separation in the structure can be as large as about 50 meV, and with different electric field, the energy levels can be tuned. We also demonstrate the fabrication of a large number of field-induced quantum dots by our super lens lithography technique. We achieved uniform arrays of contacts that are about 200 nm using a conventional UV source of λ∼400 nm.

Original languageEnglish (US)
Article number193113
JournalApplied Physics Letters
Issue number19
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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