Modeling electron and hole transport in fluoroarene-oligothiopene semiconductors: Investigation of geometric and electronic structure properties

INIS

• energy 100%
• electrons 80%
• electron transfer 60%
• dimers 60%
• transport 40%
• semiconductor materials 40%
• coupling 40%
• ionization 40%
• holes 40%
• interactions 20%
• devices 20%
• gain 20%
• applications 20%
• modeling 20%
• geometry 20%
• electronic structure 20%
• barriers 20%
• investigations 20%
• oxidation 20%
• reduction 20%
• charges 20%
• height 20%
• density functional method 20%
• reaction kinetics 20%
• hamiltonians 20%
• electron beam injection 20%
• field effect transistors 20%
• thiophene 20%

Chemistry

• Electron Particle 80%
• Electron Transfer 60%
• Energy 60%
• Reorganization Energy 40%
• Semiconductor 40%
• Ionization 40%
• Fluoroarene 40%
• Procedure 40%
• Oxidation Reaction 40%
• Density Functional Theory 20%
• Thiophene 20%
• Electronic State 20%
• Hamiltonian 20%
• Rate Constant 20%
• Reduction 20%
• Electron Transport 20%
• Hole Transport 20%
• Energetics 20%
• Application 20%
• Device 20%
• Group 20%

Material Science

• Electronics 60%
• Semiconductor Material 40%
• Material 40%
• Field Effect Transistors 20%