Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering

Yajun Wei, Manijeh Razeghi

Research output: Contribution to journalArticlepeer-review

155 Scopus citations

Abstract

We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp3s* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of GaxIn1-x type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number8
DOIs
StatePublished - Jan 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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