We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp3s* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of GaxIn1-x type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 2004|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics