Modeling type II InAs/GaSb superlattices using empirical tight-binding method: New aspects

Yajun Wei, Manijeh Razeghi*, Gail J. Brown, Meimei Z. Tidrow

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


The recent advances in the experimental work on the Type II InAs/GaSb superlattices necessitate a modeling that can handle arbitrary layer thickness as well as different types of interfaces in order to guide the superlattice design. The empirical tight-binding method (ETBM) is a very good candidate since it builds up the Hamiltonian atom by atom. There has been a lot of research work on the modeling of Type II InAs/GaSb superlattices using the ETBM. However, different groups generate very different accuracy comparing with experimental results. We have recently identified two major aspects in the modeling: the antimony segregation and the interface effects. These two aspects turned out to be of crucial importance governing the superlattice properties, especially the bandgap. We build the superlattice Hamiltonian using antimony segregated atomic profile taking into account the interface. Our calculations agree with our experimental results within growth uncertainties. In addition we introduced the concept of Ga xIn 1-x type interface engineering, which will add another design freedom especially in the mid-wavelength infrared range (3∼-7 μm) in order to reduce the lattice mismatch.

Original languageEnglish (US)
Pages (from-to)301-308
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Sep 13 2004
EventQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
Duration: Jan 25 2004Jan 29 2004


  • ETBM
  • GaSb
  • InAs
  • Infrared
  • Interface
  • Mismatch
  • Segregation
  • Superlattices
  • Tight-binding
  • Type II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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