It is shown that low energy ion bombardment during film growth increases the allowable growth temperature range over which stoichiometric compound and pseudobinary alloy films can be grown for r-values both greater than and less than unity and has no measurable effect on film stoichiometry for r equals 1. Such preferential resputtering of excess species during the growth of compounds by MTS can be used to explain the growth of metastable alloys such as InSb//1// minus //xBi//x.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
ASJC Scopus subject areas