MODIFICATION OF ELEMENTAL INCORPORATION PROBABILITIES BY ION BOMBARDMENT DURING GROWTH OF III-V COMPOUND AND METASTABLE FILMS.

J. L. Zilko*, S. A. Barnett, A. H. Eltoukhy, J. E. Greene

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

It is shown that low energy ion bombardment during film growth increases the allowable growth temperature range over which stoichiometric compound and pseudobinary alloy films can be grown for r-values both greater than and less than unity and has no measurable effect on film stoichiometry for r equals 1. Such preferential resputtering of excess species during the growth of compounds by MTS can be used to explain the growth of metastable alloys such as InSb//1// minus //xBi//x.

Original languageEnglish (US)
Pages (from-to)595-602
Number of pages8
JournalJournal of vacuum science & technology
Volume17
Issue number2
DOIs
StatePublished - Jan 1 1980

ASJC Scopus subject areas

  • Engineering(all)

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