MODIFICATION OF ELEMENTAL INCORPORATION PROBABILITIES BY ION BOMBARDMENT DURING GROWTH OF III-V COMPOUND AND METASTABLE FILMS.

It is shown that low energy ion bombardment during film growth increases the allowable growth temperature range over which stoichiometric compound and pseudobinary alloy films can be grown for r-values both greater than and less than unity and has no measurable effect on film stoichiometry for r equals 1. Such preferential resputtering of excess species during the growth of compounds by MTS can be used to explain the growth of metastable alloys such as InSb//1// minus //xBi//x.