Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Keyphrases

• Ion Species 100%
• Helium 100%
• Argon 100%
• Neon 100%
• Ion Implantation 100%
• Room Temperature 50%
• Dielectric Constant 50%
• Carbon-nitrogen 50%
• Quantitative Measurement 50%
• 2-dose 50%
• Multiple Dose 50%
• Ion Energy 50%
• Xerogel 50%
• Hardness Increase 50%
• Nanoindentation Technique 50%
• Ion Dose 50%
• Ultrasonic Force Microscopy 50%
• Qualitative Measurement 50%
• Xerogel Films 50%
• Low Dielectric Materials 50%
• Implanted Ions 50%
• Low Dielectric Constant Materials 50%
• Argon Implantation 50%
• Hardness Improvement 50%

Material Science

• Permittivity 100%
• Ion Implantation 100%
• Xerogel 100%
• Nanoindentation 50%
• Film 50%
• Elasticity 50%
• Thin Films 50%
• Dielectric Material 50%