We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p -type heterostructures, changing to p -growth conditions for the doping layer alone. The strongly autocompensated doping is characterized in bulk samples first, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To overcome the poor morphology inherent to Si p -type (110) growth, heterostructures are then fabricated with only the modulation-doping layer grown under p -type conditions. Such heterostructures show a hole mobility of μ=1.75× 105 cm2 V s at density p=2.4× 1011 cm-2. We identify the zero-field spin-splitting characteristic of p -type heterostructures, but observe a remarkably isotropic mobility and a persistent photoconductivity unusual for p heterojunctions grown on other facets. This modulated growth technique is particularly relevant for p -type cleaved-edge overgrowth and for III-V growth chambers, where Si is the only dopant.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)