Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

R. G. Benz; P. C. Huang; S. R. Stock; C. J. Summers

doi:10.1016/0022-0248(90)90734-3

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

R. G. Benz^*, P. C. Huang, S. R. Stock, C. J. Summers

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Original language	English (US)
Pages (from-to)	303-310
Number of pages	8
Journal	Journal of Crystal Growth
Volume	86
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)90734-3
State	Published - Jan 1 1988

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(90)90734-3

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@article{f4255cffacf84eda8d5bd401bfee6e15,

title = "Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs",

abstract = "The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.",

author = "Benz, {R. G.} and Huang, {P. C.} and Stock, {S. R.} and Summers, {C. J.}",

note = "Funding Information: The authors would like to thank Dr. J.B. Robertson for helpful discussions. The technical assistance of B.K. Wagner and J.D. Benson of Georgia Tech is gratefully acknowledged. Thanks is also extended to CVD, Inc. and Raytheon for donation of the ZnS source material. This work was sponsored by NASA under grant NAG-I-586.",

year = "1988",

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doi = "10.1016/0022-0248(90)90734-3",

language = "English (US)",

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TY - JOUR

T1 - Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

AU - Benz, R. G.

AU - Huang, P. C.

AU - Stock, S. R.

AU - Summers, C. J.

N1 - Funding Information: The authors would like to thank Dr. J.B. Robertson for helpful discussions. The technical assistance of B.K. Wagner and J.D. Benson of Georgia Tech is gratefully acknowledged. Thanks is also extended to CVD, Inc. and Raytheon for donation of the ZnS source material. This work was sponsored by NASA under grant NAG-I-586.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

AB - The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

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U2 - 10.1016/0022-0248(90)90734-3

DO - 10.1016/0022-0248(90)90734-3

M3 - Article

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VL - 86

SP - 303

EP - 310

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

Abstract

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