Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

R. G. Benz*, P. C. Huang, S. R. Stock, C. J. Summers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Original languageEnglish (US)
Pages (from-to)303-310
Number of pages8
JournalJournal of Crystal Growth
Volume86
Issue number1-4
DOIs
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs'. Together they form a unique fingerprint.

Cite this