Abstract
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.
Original language | English (US) |
---|---|
Pages (from-to) | 303-310 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 86 |
Issue number | 1-4 |
DOIs | |
State | Published - Jan 1 1988 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry