Molecular beam epitaxial growth of high quality InSb

E. Michel*, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

Original languageEnglish (US)
Pages (from-to)3338-3340
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number26
DOIs
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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