Molecular beam epitaxial growth of high quality InSb

E. Michel*, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

Original languageEnglish (US)
Pages (from-to)3338-3340
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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