Molecular beam epitaxial growth of high quality InSb

E. Michel; G. Singh; S. Slivken; C. Besikci; P. Bove; I. Ferguson; M. Razeghi

doi:10.1063/1.112384

Molecular beam epitaxial growth of high quality InSb

E. Michel^*, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, M. Razeghi

^*Corresponding author for this work

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Abstract

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm² V^-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

Original language	English (US)
Pages (from-to)	3338-3340
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	26
DOIs	https://doi.org/10.1063/1.112384
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Molecular beam epitaxial growth of high quality InSb",

abstract = "In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.",

author = "E. Michel and G. Singh and S. Slivken and C. Besikci and P. Bove and I. Ferguson and M. Razeghi",

year = "1994",

doi = "10.1063/1.112384",

language = "English (US)",

volume = "65",

pages = "3338--3340",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Molecular beam epitaxial growth of high quality InSb

AU - Michel, E.

AU - Singh, G.

AU - Slivken, S.

AU - Besikci, C.

AU - Bove, P.

AU - Ferguson, I.

AU - Razeghi, M.

PY - 1994

Y1 - 1994

N2 - In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

AB - In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

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U2 - 10.1063/1.112384

DO - 10.1063/1.112384

M3 - Article

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VL - 65

SP - 3338

EP - 3340

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Molecular beam epitaxial growth of high quality InSb

Abstract

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