Molecular-beam epitaxial growth of high quality InSb for p-i-n photodetectors

G. Singh*, E. Michel, C. Jelen, Steven Boyd Slivken, J. Xu, P. Bove, I. Ferguson, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

We report the growth of high quality InSb p-i-n structures which have been optimized using reflection high energy electron diffraction. Optimized InSb p-i-n structures of 5.8 μm thickness demonstrated x-ray full widths at half-maximums (FWHMs) of 101 and 147 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity and morphology. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1/1.2 had an x-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92 300 cm 2 V -1 s -1 at 77 K.

Original languageEnglish (US)
Pages (from-to)782-785
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number2
DOIs
StatePublished - Mar 1 1995
EventProceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA
Duration: Oct 10 1994Oct 12 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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