Abstract
We report the growth of high quality InSb p-i-n structures which have been optimized using reflection high energy electron diffraction. Optimized InSb p-i-n structures of 5.8 μm thickness demonstrated x-ray full widths at half-maximums (FWHMs) of 101 and 147 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity and morphology. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1/1.2 had an x-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 s-1 at 77 K.
Original language | English (US) |
---|---|
Pages (from-to) | 782-785 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 13 |
Issue number | 2 |
DOIs | |
State | Published - Mar 1995 |
Event | Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA Duration: Oct 10 1994 → Oct 12 1994 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering