Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

E. Michel*, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, Ian T. Ferguson, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages379-388
Number of pages10
ISBN (Print)0819417440, 9780819417442
DOIs
StatePublished - 1995
EventOptoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA
Duration: Feb 6 1995Feb 9 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2397
ISSN (Print)0277-786X

Other

OtherOptoelectronic Integrated Circuit Materials, Physics, and Devices
CitySan Jose, CA, USA
Period2/6/952/9/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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