Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

E. Michel; R. Peters; S. Slivken; C. Jelen; P. Bove; J. Xu; Ian T. Ferguson; Manijeh Razeghi

doi:10.1117/12.206888

Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

E. Michel^*, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, Ian T. Ferguson, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm²V^-1s^-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	379-388
Number of pages	10
ISBN (Print)	0819417440, 9780819417442
DOIs	https://doi.org/10.1117/12.206888
State	Published - 1995
Event	Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: Feb 6 1995 → Feb 9 1995

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2397
ISSN (Print)	0277-786X

Other

Other	Optoelectronic Integrated Circuit Materials, Physics, and Devices
City	San Jose, CA, USA
Period	2/6/95 → 2/9/95

Funding

We would like to acknowledge NIH/NINDS K08NS088563-01 (P. Cengiz), NIH/NINDS K08NS078113 (P. Ferrazzano), a Department of Pediatrics Research and Development Grant (P. Cengiz and P. Ferrazzano), and NIH grant P30 HD03352 (Waisman Center).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1117/12.206888

Cite this

Michel, E., Peters, R., Slivken, S., Jelen, C., Bove, P., Xu, J., Ferguson, I. T., & Razeghi, M. (1995). Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 379-388). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2397). Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.206888

@inproceedings{90371e9498ae4b11af311ec081e2ff5b,

title = "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si",

abstract = "High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.",

author = "E. Michel and R. Peters and S. Slivken and C. Jelen and P. Bove and J. Xu and Ferguson, {Ian T.} and Manijeh Razeghi",

note = "Funding Information: We would like to acknowledge NIH/NINDS K08NS088563-01 (P. Cengiz), NIH/NINDS K08NS078113 (P. Ferrazzano), a Department of Pediatrics Research and Development Grant (P. Cengiz and P. Ferrazzano), and NIH grant P30 HD03352 (Waisman Center). ; Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",

year = "1995",

doi = "10.1117/12.206888",

language = "English (US)",

isbn = "0819417440",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

pages = "379--388",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Michel, E, Peters, R, Slivken, S, Jelen, C, Bove, P, Xu, J, Ferguson, IT & Razeghi, M 1995, Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2397, Society of Photo-Optical Instrumentation Engineers, pp. 379-388, Optoelectronic Integrated Circuit Materials, Physics, and Devices, San Jose, CA, USA, 2/6/95. https://doi.org/10.1117/12.206888

Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si. / Michel, E.; Peters, R.; Slivken, S. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, 1995. p. 379-388 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2397).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

AU - Michel, E.

AU - Peters, R.

AU - Slivken, S.

AU - Jelen, C.

AU - Bove, P.

AU - Xu, J.

AU - Ferguson, Ian T.

AU - Razeghi, Manijeh

N1 - Funding Information: We would like to acknowledge NIH/NINDS K08NS088563-01 (P. Cengiz), NIH/NINDS K08NS078113 (P. Ferrazzano), a Department of Pediatrics Research and Development Grant (P. Cengiz and P. Ferrazzano), and NIH grant P30 HD03352 (Waisman Center).

PY - 1995

Y1 - 1995

N2 - High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

AB - High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

UR - http://www.scopus.com/inward/record.url?scp=0029211132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029211132&partnerID=8YFLogxK

U2 - 10.1117/12.206888

DO - 10.1117/12.206888

M3 - Conference contribution

AN - SCOPUS:0029211132

SN - 0819417440

SN - 9780819417442

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 379

EP - 388

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Optoelectronic Integrated Circuit Materials, Physics, and Devices

Y2 - 6 February 1995 through 9 February 1995

ER -

Michel E, Peters R, Slivken S, Jelen C, Bove P, Xu J et al. Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si. In Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers. 1995. p. 379-388. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.206888

Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

Abstract

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ASJC Scopus subject areas

UN SDGs

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