Abstract
High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 379-388 |
Number of pages | 10 |
ISBN (Print) | 0819417440, 9780819417442 |
DOIs | |
State | Published - 1995 |
Event | Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: Feb 6 1995 → Feb 9 1995 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 2397 |
ISSN (Print) | 0277-786X |
Other
Other | Optoelectronic Integrated Circuit Materials, Physics, and Devices |
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City | San Jose, CA, USA |
Period | 2/6/95 → 2/9/95 |
Funding
We would like to acknowledge NIH/NINDS K08NS088563-01 (P. Cengiz), NIH/NINDS K08NS078113 (P. Ferrazzano), a Department of Pediatrics Research and Development Grant (P. Cengiz and P. Ferrazzano), and NIH grant P30 HD03352 (Waisman Center).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering