@inproceedings{90371e9498ae4b11af311ec081e2ff5b,
title = "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si",
abstract = "High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 μm grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of ±3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 μm up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.",
author = "E. Michel and R. Peters and S. Slivken and C. Jelen and P. Bove and J. Xu and Ferguson, {Ian T.} and Manijeh Razeghi",
year = "1995",
doi = "10.1117/12.206888",
language = "English (US)",
isbn = "0819417440",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "379--388",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",
}