Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

I. Tångring*, S. M. Wang, A. Larsson, H. Q. Ni, B. P. Wu, Donghai Wu, Y. H. Xiong, S. S. Huang, Z. C. Niu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 μm range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 μm 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 μm at room temperature.

Original languageEnglish (US)
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period5/25/085/29/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Tångring, I., Wang, S. M., Larsson, A., Ni, H. Q., Wu, B. P., Wu, D., Xiong, Y. H., Huang, S. S., & Niu, Z. C. (2008). Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4702982] https://doi.org/10.1109/ICIPRM.2008.4702982