Molecular beam epitaxy growth of exchange-biased PtMnNiFe bilayers with a spontaneously ordered PtMn layer

Y. S. Choi*, A. K. Petford-Long, R. C C Ward, R. Fan, J. P. Goff, T. P A Hase

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the direct epitaxial growth of equiatomic ordered antiferromagnetic PtMn layers by molecular beam epitaxy. Such layers are used in giant magnetoresistance spin valve sensors as the antiferromagnetic pinning layer. Structural characterization and phase identification confirmed the spontaneous formation of the chemically ordered face-centered-tetragonal (L 10) phase of PtMn with about 87.4% ordering. Based on the antiferromagnetic PtMn layer, we prepared exchange-biased PtMnNiFe bilayers with various PtMn thicknesses. The exchange anisotropy field of the bilayer with NiFe grown on PtMn stabilizes at about 50 Oe beyond a PtMn thickness of 15 nm. Although the exchange anisotropy field is small compared to that of the polycrystalline system, the antiferromagnetic domain structure is stable over repetitive external magnetic field cycling and no training effect is observed.

Original languageEnglish (US)
Article number083903
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Molecular beam epitaxy growth of exchange-biased PtMnNiFe bilayers with a spontaneously ordered PtMn layer'. Together they form a unique fingerprint.

Cite this