Molecular beam epitaxy of CuCl films on mica

H. K. Wong; S. J. Gu; G. K. Wong; J. B. Ketterson

doi:10.1016/0040-6090(82)90032-3

Molecular beam epitaxy of CuCl films on mica

H. K. Wong^*, S. J. Gu, G. K. Wong, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy.

Original language	English (US)
Pages (from-to)	75-78
Number of pages	4
Journal	Thin Solid Films
Volume	94
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(82)90032-3
State	Published - Aug 6 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(82)90032-3

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title = "Molecular beam epitaxy of CuCl films on mica",

abstract = "Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy.",

author = "Wong, {H. K.} and Gu, {S. J.} and Wong, {G. K.} and Ketterson, {J. B.}",

note = "Funding Information: We should like to thank B. Y. Jin and A. Di Venere who helped with portions of this study. The work was supported by the National Science Foundation-Materials Research Laboratory program through the Materials Research Center of North-western University (Grant DM R-76-80847). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1982",

month = aug,

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doi = "10.1016/0040-6090(82)90032-3",

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T1 - Molecular beam epitaxy of CuCl films on mica

AU - Wong, H. K.

AU - Gu, S. J.

AU - Wong, G. K.

AU - Ketterson, J. B.

N1 - Funding Information: We should like to thank B. Y. Jin and A. Di Venere who helped with portions of this study. The work was supported by the National Science Foundation-Materials Research Laboratory program through the Materials Research Center of North-western University (Grant DM R-76-80847). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1982/8/6

Y1 - 1982/8/6

N2 - Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy.

AB - Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy.

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DO - 10.1016/0040-6090(82)90032-3

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Molecular beam epitaxy of CuCl films on mica

Abstract

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