Molecular beam epitaxy of CuCl films on mica

H. K. Wong*, S. J. Gu, G. K. Wong, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy.

Original languageEnglish (US)
Pages (from-to)75-78
Number of pages4
JournalThin Solid Films
Volume94
Issue number1
DOIs
StatePublished - Aug 6 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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