Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content

S. V. Novikov*, K. M. Yu, A. X. Levander, Z. Liliental-Weber, Roberto dos Reis, A. J. Kent, A. Tseng, O. D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, F. Luckert, P. R. Edwards, R. W. Martin, C. T. Foxon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100°C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN 1-xBi x alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN 1-xBi x alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN 1-xBi x alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1eV.

Original languageEnglish (US)
Pages (from-to)419-423
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number3
DOIs
StatePublished - Mar 2012

Keywords

  • molecular beam epitaxy
  • nitrides
  • semiconducting III-V materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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