Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content

S. V. Novikov; K. M. Yu; A. X. Levander; Z. Liliental-Weber; Roberto dos Reis; A. J. Kent; A. Tseng; O. D. Dubon; J. Wu; J. Denlinger; W. Walukiewicz; F. Luckert; P. R. Edwards; R. W. Martin; C. T. Foxon

doi:10.1002/pssa.201100312

Molecular beam epitaxy of GaN _1-xBi _x alloys with high bismuth content

S. V. Novikov^*, K. M. Yu, A. X. Levander, Z. Liliental-Weber, Roberto dos Reis, A. J. Kent, A. Tseng, O. D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, F. Luckert, P. R. Edwards, R. W. Martin, C. T. Foxon

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100°C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN _1-xBi _x alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN _1-xBi _x alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN _1-xBi _x alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1eV.

Original language	English (US)
Pages (from-to)	419-423
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	209
Issue number	3
DOIs	https://doi.org/10.1002/pssa.201100312
State	Published - Mar 2012

Keywords

molecular beam epitaxy
nitrides
semiconducting III-V materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201100312

Cite this

Novikov, S. V., Yu, K. M., Levander, A. X., Liliental-Weber, Z., dos Reis, R., Kent, A. J., Tseng, A., Dubon, O. D., Wu, J., Denlinger, J., Walukiewicz, W., Luckert, F., Edwards, P. R., Martin, R. W., & Foxon, C. T. (2012). Molecular beam epitaxy of GaN _1-xBi _x alloys with high bismuth content. Physica Status Solidi (A) Applications and Materials Science, 209(3), 419-423. https://doi.org/10.1002/pssa.201100312

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title = "Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content",

abstract = "We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100°C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN 1-xBi x alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN 1-xBi x alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN 1-xBi x alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1eV.",

keywords = "molecular beam epitaxy, nitrides, semiconducting III-V materials",

author = "Novikov, {S. V.} and Yu, {K. M.} and Levander, {A. X.} and Z. Liliental-Weber and {dos Reis}, Roberto and Kent, {A. J.} and A. Tseng and Dubon, {O. D.} and J. Wu and J. Denlinger and W. Walukiewicz and F. Luckert and Edwards, {P. R.} and Martin, {R. W.} and Foxon, {C. T.}",

year = "2012",

month = mar,

doi = "10.1002/pssa.201100312",

language = "English (US)",

volume = "209",

pages = "419--423",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

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Novikov, SV, Yu, KM, Levander, AX, Liliental-Weber, Z, dos Reis, R, Kent, AJ, Tseng, A, Dubon, OD, Wu, J, Denlinger, J, Walukiewicz, W, Luckert, F, Edwards, PR, Martin, RW & Foxon, CT 2012, 'Molecular beam epitaxy of GaN _1-xBi _x alloys with high bismuth content', Physica Status Solidi (A) Applications and Materials Science, vol. 209, no. 3, pp. 419-423. https://doi.org/10.1002/pssa.201100312

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T1 - Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content

AU - Novikov, S. V.

AU - Yu, K. M.

AU - Levander, A. X.

AU - Liliental-Weber, Z.

AU - dos Reis, Roberto

AU - Kent, A. J.

AU - Tseng, A.

AU - Dubon, O. D.

AU - Wu, J.

AU - Denlinger, J.

AU - Walukiewicz, W.

AU - Luckert, F.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Foxon, C. T.

PY - 2012/3

Y1 - 2012/3

N2 - We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100°C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN 1-xBi x alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN 1-xBi x alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN 1-xBi x alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1eV.

AB - We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100°C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN 1-xBi x alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN 1-xBi x alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN 1-xBi x alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1eV.

KW - molecular beam epitaxy

KW - nitrides

KW - semiconducting III-V materials

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