Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

Myng Han Yoon; Antonio Facchetti; Tobin J. Marks

doi:10.1557/proc-871-i3.2

Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

Myng Han Yoon, Antonio Facchetti^*, Tobin J. Marks

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm^-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

Original language	English (US)
Title of host publication	Organic Thin-Film Electronics
Publisher	Materials Research Society
Pages	61-66
Number of pages	6
ISBN (Print)	155899825X, 9781558998254
DOIs	https://doi.org/10.1557/proc-871-i3.2
State	Published - Jan 1 2005
Event	2005 MRS Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	871
ISSN (Print)	0272-9172

Other

Other	2005 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	3/28/05 → 4/1/05

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-871-i3.2

Cite this

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title = "Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors",

abstract = "Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.",

author = "Yoon, {Myng Han} and Antonio Facchetti and Marks, {Tobin J.}",

year = "2005",

month = jan,

day = "1",

doi = "10.1557/proc-871-i3.2",

language = "English (US)",

isbn = "155899825X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "61--66",

booktitle = "Organic Thin-Film Electronics",

note = "2005 MRS Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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T1 - Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

AU - Yoon, Myng Han

AU - Facchetti, Antonio

AU - Marks, Tobin J.

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Y1 - 2005/1/1

N2 - Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

AB - Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

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U2 - 10.1557/proc-871-i3.2

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M3 - Conference contribution

AN - SCOPUS:34249946343

SN - 155899825X

SN - 9781558998254

T3 - Materials Research Society Symposium Proceedings

SP - 61

EP - 66

BT - Organic Thin-Film Electronics

PB - Materials Research Society

T2 - 2005 MRS Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

Abstract

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