MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

P. Maurel; P. Bove; J. C. Garcia; M. Razeghi

doi:10.1088/0268-1242/5/6/034

MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

P. Maurel^*, P. Bove, J. C. Garcia, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm² V^-1 s^-1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 10¹⁵ cm^-3 range. Ga_xIn_1-xAs ternary compounds have been grown on 2" InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm² V^-1 s^-1 and mu (4 K)=80000 cm² V^-1 s^-1 has been measured.

Original language	English (US)
Article number	034
Pages (from-to)	638-642
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	5
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/5/6/034
State	Published - 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/5/6/034

Cite this

@article{acf1d90857f8440fa6ae0d961c815a22,

title = "MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers",

abstract = "Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm2 V-1 s-1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 1015 cm-3 range. GaxIn1-xAs ternary compounds have been grown on 2{"} InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm2 V-1 s-1 and mu (4 K)=80000 cm2 V-1 s-1 has been measured.",

author = "P. Maurel and P. Bove and Garcia, {J. C.} and M. Razeghi",

year = "1990",

doi = "10.1088/0268-1242/5/6/034",

language = "English (US)",

volume = "5",

pages = "638--642",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

AU - Maurel, P.

AU - Bove, P.

AU - Garcia, J. C.

AU - Razeghi, M.

PY - 1990

Y1 - 1990

N2 - Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm2 V-1 s-1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 1015 cm-3 range. GaxIn1-xAs ternary compounds have been grown on 2" InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm2 V-1 s-1 and mu (4 K)=80000 cm2 V-1 s-1 has been measured.

AB - Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm2 V-1 s-1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 1015 cm-3 range. GaxIn1-xAs ternary compounds have been grown on 2" InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm2 V-1 s-1 and mu (4 K)=80000 cm2 V-1 s-1 has been measured.

UR - http://www.scopus.com/inward/record.url?scp=0025438174&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025438174&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/5/6/034

DO - 10.1088/0268-1242/5/6/034

M3 - Article

AN - SCOPUS:0025438174

SN - 0268-1242

VL - 5

SP - 638

EP - 642

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

M1 - 034

ER -

MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this