Monolayer abruptness in highly strained InAsxP1-x/InP quantum well interfaces

R. P. Schneider*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


InAsxP1-x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40-0.67 and quantum well thicknesses of 0.8-16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8-14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.

Original languageEnglish (US)
Pages (from-to)1142-1144
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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