Monolayer abruptness in highly strained InAsxP1-x/InP quantum well interfaces

R. P. Schneider; B. W. Wessels

doi:10.1063/1.100742

Monolayer abruptness in highly strained InAs_xP_1-x/InP quantum well interfaces

R. P. Schneider^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

InAs_xP_1-x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40-0.67 and quantum well thicknesses of 0.8-16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8-14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.

Original language	English (US)
Pages (from-to)	1142-1144
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	12
DOIs	https://doi.org/10.1063/1.100742
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Monolayer abruptness in highly strained InAsxP1-x/InP quantum well interfaces",

abstract = "InAsxP1-x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40-0.67 and quantum well thicknesses of 0.8-16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8-14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.",

author = "Schneider, {R. P.} and Wessels, {B. W.}",

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T1 - Monolayer abruptness in highly strained InAsxP1-x/InP quantum well interfaces

AU - Schneider, R. P.

AU - Wessels, B. W.

PY - 1989

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N2 - InAsxP1-x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40-0.67 and quantum well thicknesses of 0.8-16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8-14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.

AB - InAsxP1-x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40-0.67 and quantum well thicknesses of 0.8-16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8-14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.

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Monolayer abruptness in highly strained InAs_xP_1-x/InP quantum well interfaces

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