We report, in this letter, the successful growth of Ga0.5In 0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga 0.5In0.5As/InP system.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)