Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

M. Razeghi*, Ph Maurel, F. Omnes, J. Nagle

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We report, in this letter, the successful growth of Ga0.5In 0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga 0.5In0.5As/InP system.

Original languageEnglish (US)
Pages (from-to)2216-2218
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number26
DOIs
StatePublished - Dec 1 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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