Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

M. Razeghi; Ph Maurel; F. Omnes; J. Nagle

doi:10.1063/1.98944

Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

M. Razeghi^*, Ph Maurel, F. Omnes, J. Nagle

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report, in this letter, the successful growth of Ga_0.5In _0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) _n(InAs)_n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)_n(InAs)_n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga _0.5In_0.5As/InP system.

Original language	English (US)
Pages (from-to)	2216-2218
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	26
DOIs	https://doi.org/10.1063/1.98944
State	Published - 1987

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition",

abstract = "We report, in this letter, the successful growth of Ga0.5In 0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga 0.5In0.5As/InP system.",

author = "M. Razeghi and Ph Maurel and F. Omnes and J. Nagle",

year = "1987",

doi = "10.1063/1.98944",

language = "English (US)",

volume = "51",

pages = "2216--2218",

journal = "Applied Physics Letters",

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T1 - Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Maurel, Ph

AU - Omnes, F.

AU - Nagle, J.

PY - 1987

Y1 - 1987

N2 - We report, in this letter, the successful growth of Ga0.5In 0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga 0.5In0.5As/InP system.

AB - We report, in this letter, the successful growth of Ga0.5In 0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga 0.5In0.5As/InP system.

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M3 - Article

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EP - 2218

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

Abstract

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