Monolayer MoS2 Strained to 1.3% with a microelectromechanical system

Jason W. Christopher; Mounika Vutukuru; David Lloyd; J. Scott Bunch; Bennett B. Goldberg; David J. Bishop; Anna K. Swan

doi:10.1109/JMEMS.2018.2877983

Monolayer MoS₂ Strained to 1.3% with a microelectromechanical system

Jason W. Christopher^*, Mounika Vutukuru, David Lloyd, J. Scott Bunch, Bennett B. Goldberg, David J. Bishop, Anna K. Swan

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We report on a modified transfer technique for atomically thin materials integrated into microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS while still providing precise positioning and crack-free transfer of flakes. Furthermore, our method used the transfer polymer to anchor the 2D crystal to the MEMS, which reduces the fabrication time and increases the yield, and allowed us to exploit the strong mechanical coupling between the 2D crystal and polymer to strain the atomically thin system. We successfully strained single atomic layers of molybdenum disulfide (MoS₂) with MEMS devices for the first time and achieved greater than 1.3% strain, marking a major milestone for incorporating 2D materials with MEMS. We used the established strain response of MoS₂ Raman and photoluminescence spectra to deduce the strain in our crystals and provide a consistency check. We found good comparison between our experiment and the literature.

Original language	English (US)
Article number	8607976
Pages (from-to)	254-263
Number of pages	10
Journal	Journal of Microelectromechanical Systems
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/JMEMS.2018.2877983
State	Published - Apr 2019

Funding

Manuscript received June 29, 2018; revised September 10, 2018; accepted October 7, 2018. Date of publication January 10, 2019; date of current version April 2, 2019. This work was supported by the National Science Foundation Division of Materials Research under Grant 1411008. The work of J. W. Christopher was supported by the Department of Defense (DoD), Air Force Office of Scientific Research, through the National Defense Science and Engineering Graduate (NDSEG) Fellowship under Grant 32 CFR 168a. The work of D. J. Bishop was supported by the Engineering Research Centers Program of the National Science Foundation under NSF Cooperative Agreement under Grant EEC-1647837. Subject Editor O. Tabata. (Corresponding author: Jason W. Christopher.) J. W. Christopher is with the Department of Physics, Boston University, Boston, MA 02215 USA (e-mail: [email protected]).

Keywords

MEMS
Raman
monolayer MoS
photoluminescence
strain

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/JMEMS.2018.2877983

Cite this

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title = "Monolayer MoS2 Strained to 1.3% with a microelectromechanical system",

abstract = "We report on a modified transfer technique for atomically thin materials integrated into microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS while still providing precise positioning and crack-free transfer of flakes. Furthermore, our method used the transfer polymer to anchor the 2D crystal to the MEMS, which reduces the fabrication time and increases the yield, and allowed us to exploit the strong mechanical coupling between the 2D crystal and polymer to strain the atomically thin system. We successfully strained single atomic layers of molybdenum disulfide (MoS2) with MEMS devices for the first time and achieved greater than 1.3% strain, marking a major milestone for incorporating 2D materials with MEMS. We used the established strain response of MoS2 Raman and photoluminescence spectra to deduce the strain in our crystals and provide a consistency check. We found good comparison between our experiment and the literature.",

keywords = "MEMS, Raman, monolayer MoS, photoluminescence, strain",

author = "Christopher, {Jason W.} and Mounika Vutukuru and David Lloyd and Bunch, {J. Scott} and Goldberg, {Bennett B.} and Bishop, {David J.} and Swan, {Anna K.}",

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AU - Swan, Anna K.

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