TY - JOUR
T1 - Monolithic integrated photoreceiver for 1.3-1.55-μm wavelengths
T2 - Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy
AU - Therani, A. Hosseini
AU - Decoster, D.
AU - Vilcot, J. P.
AU - Razeghi, M.
PY - 1988/12/1
Y1 - 1988/12/1
N2 - We present a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated, for the first time, on Ga0.49In0.51P/Ga0.47In 0.53As strained heteroepitaxial material. Static, dynamic, and noise properties of the Schottky photodiode, the field-effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at 1.3-μm wavelength for the integrated photoreceiver. The performance of the device is discussed, taking into account the integrated circuit design and the main characteristics of the material.
AB - We present a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated, for the first time, on Ga0.49In0.51P/Ga0.47In 0.53As strained heteroepitaxial material. Static, dynamic, and noise properties of the Schottky photodiode, the field-effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at 1.3-μm wavelength for the integrated photoreceiver. The performance of the device is discussed, taking into account the integrated circuit design and the main characteristics of the material.
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U2 - 10.1063/1.341686
DO - 10.1063/1.341686
M3 - Article
AN - SCOPUS:36549095295
SN - 0021-8979
VL - 64
SP - 2215
EP - 2218
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
ER -