Monolithic integration of a Ga0.47In0.53as photoconductor with a n-/n+GaAs rib waveguide: A simple design device

F. Mallecot; J. P. Vilcot; D. Decoster; M. Razeghi

Monolithic integration of a Ga_0.47In_0.53as photoconductor with a n^-/n⁺GaAs rib waveguide: A simple design device

F. Mallecot^*, J. P. Vilcot, D. Decoster, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We report the first fabrication of an optoelectronic integrated circuit constituted of a Ga 0.47 In 0.53 As planar photoconductive detector (suitable fbor 1.3¿m - 1.55¿m wavelength optical communication systems) associated with a n^¿/n⁺GaAs rib waveguide. The capabilities of such a device to detect a part of a light propagating inside the waveguide are experimentally demonstrated.

Original language	English (US)
Title of host publication	ESSDERC 1987 - 17th European Solid State Device Research Conference
Publisher	IEEE Computer Society
Pages	955-958
Number of pages	4
ISBN (Electronic)	0444704779
ISBN (Print)	9780444704771
State	Published - 1987
Event	17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy Duration: Sep 14 1987 → Sep 17 1987

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	17th European Solid State Device Research Conference, ESSDERC 1987
Country/Territory	Italy
City	Bologna
Period	9/14/87 → 9/17/87

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

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title = "Monolithic integration of a Ga0.47In0.53as photoconductor with a n-/n+GaAs rib waveguide: A simple design device",

abstract = "We report the first fabrication of an optoelectronic integrated circuit constituted of a Ga 0.47 In 0.53 As planar photoconductive detector (suitable fbor 1.3¿m - 1.55¿m wavelength optical communication systems) associated with a n¿/n+GaAs rib waveguide. The capabilities of such a device to detect a part of a light propagating inside the waveguide are experimentally demonstrated.",

author = "F. Mallecot and Vilcot, {J. P.} and D. Decoster and M. Razeghi",

note = "Publisher Copyright: {\textcopyright} 1987 Elsevier.; 17th European Solid State Device Research Conference, ESSDERC 1987 ; Conference date: 14-09-1987 Through 17-09-1987",

year = "1987",

language = "English (US)",

isbn = "9780444704771",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "955--958",

booktitle = "ESSDERC 1987 - 17th European Solid State Device Research Conference",

address = "United States",

}

Mallecot, F, Vilcot, JP, Decoster, D & Razeghi, M 1987, Monolithic integration of a Ga_0.47In_0.53as photoconductor with a n^-/n⁺GaAs rib waveguide: A simple design device. in ESSDERC 1987 - 17th European Solid State Device Research Conference., 5436793, European Solid-State Device Research Conference, IEEE Computer Society, pp. 955-958, 17th European Solid State Device Research Conference, ESSDERC 1987, Bologna, Italy, 9/14/87.

Monolithic integration of a Ga_0.47In_0.53as photoconductor with a n^-/n⁺GaAs rib waveguide: A simple design device. / Mallecot, F.; Vilcot, J. P.; Decoster, D. et al.
ESSDERC 1987 - 17th European Solid State Device Research Conference. IEEE Computer Society, 1987. p. 955-958 5436793 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T2 - 17th European Solid State Device Research Conference, ESSDERC 1987

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AU - Vilcot, J. P.

AU - Decoster, D.

AU - Razeghi, M.

PY - 1987

Y1 - 1987

N2 - We report the first fabrication of an optoelectronic integrated circuit constituted of a Ga 0.47 In 0.53 As planar photoconductive detector (suitable fbor 1.3¿m - 1.55¿m wavelength optical communication systems) associated with a n¿/n+GaAs rib waveguide. The capabilities of such a device to detect a part of a light propagating inside the waveguide are experimentally demonstrated.

AB - We report the first fabrication of an optoelectronic integrated circuit constituted of a Ga 0.47 In 0.53 As planar photoconductive detector (suitable fbor 1.3¿m - 1.55¿m wavelength optical communication systems) associated with a n¿/n+GaAs rib waveguide. The capabilities of such a device to detect a part of a light propagating inside the waveguide are experimentally demonstrated.

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M3 - Conference contribution

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SN - 9780444704771

T3 - European Solid-State Device Research Conference

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BT - ESSDERC 1987 - 17th European Solid State Device Research Conference

PB - IEEE Computer Society

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