Monolithic integration of a Ga0.47In0.53as photoconductor with a n-/n+GaAs rib waveguide: A simple design device

F. Mallecot*, J. P. Vilcot, D. Decoster, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report the first fabrication of an optoelectronic integrated circuit constituted of a Ga 0.47 In 0.53 As planar photoconductive detector (suitable fbor 1.3¿m - 1.55¿m wavelength optical communication systems) associated with a n¿/n+GaAs rib waveguide. The capabilities of such a device to detect a part of a light propagating inside the waveguide are experimentally demonstrated.

Original languageEnglish (US)
Title of host publicationESSDERC 1987 - 17th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages955-958
Number of pages4
ISBN (Electronic)0444704779
ISBN (Print)9780444704771
StatePublished - 1987
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: Sep 14 1987Sep 17 1987

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other17th European Solid State Device Research Conference, ESSDERC 1987
CountryItaly
CityBologna
Period9/14/879/17/87

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Mallecot, F., Vilcot, J. P., Decoster, D., & Razeghi, M. (1987). Monolithic integration of a Ga0.47In0.53as photoconductor with a n-/n+GaAs rib waveguide: A simple design device. In ESSDERC 1987 - 17th European Solid State Device Research Conference (pp. 955-958). [5436793] (European Solid-State Device Research Conference). IEEE Computer Society.