Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

F. Mallecot*, J. F. Vinchant, M. Razeghi, D. Vandermoere, J. P. Vilcot, D. Decoster

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.

Original languageEnglish (US)
Pages (from-to)2522-2524
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number25
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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