We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1988|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)