Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

F. Mallecot; J. F. Vinchant; M. Razeghi; D. Vandermoere; J. P. Vilcot; D. Decoster

doi:10.1063/1.100196

Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

F. Mallecot^*, J. F. Vinchant, M. Razeghi, D. Vandermoere, J. P. Vilcot, D. Decoster

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report the first fabrication of a Ga_0.47In_0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.

Original language	English (US)
Pages (from-to)	2522-2524
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	25
DOIs	https://doi.org/10.1063/1.100196
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate",

abstract = "We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.",

author = "F. Mallecot and Vinchant, {J. F.} and M. Razeghi and D. Vandermoere and Vilcot, {J. P.} and D. Decoster",

year = "1988",

doi = "10.1063/1.100196",

language = "English (US)",

volume = "53",

pages = "2522--2524",

journal = "Applied Physics Letters",

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T1 - Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

AU - Mallecot, F.

AU - Vinchant, J. F.

AU - Razeghi, M.

AU - Vandermoere, D.

AU - Vilcot, J. P.

AU - Decoster, D.

PY - 1988

Y1 - 1988

N2 - We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.

AB - We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi-insulating GaAs substrate, which needs a short-length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four-layer model with complex refractive indices in each layer.

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DO - 10.1063/1.100196

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

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