Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

Guotong Du; Yongsheng Zhao; Xuemei Li; Junfeng Song; Weihua Hah; Dingsan Gao; Shengli Wu; Gregory Devane; Kathleen A. Stair; R. P H Chang

Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

Guotong Du^*, Yongsheng Zhao, Xuemei Li, Junfeng Song, Weihua Hah, Dingsan Gao, Shengli Wu, Gregory Devane, Kathleen A. Stair, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

Original language	English (US)
Pages (from-to)	138-139
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 1997
Event	Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Monolithic integration of GaAlAs superluminescent diode with the optical amplifier",

abstract = "Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.",

author = "Guotong Du and Yongsheng Zhao and Xuemei Li and Junfeng Song and Weihua Hah and Dingsan Gao and Shengli Wu and Gregory Devane and Stair, {Kathleen A.} and Chang, {R. P H}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) ; Conference date: 10-11-1997 Through 13-11-1997",

year = "1997",

language = "English (US)",

volume = "1",

pages = "138--139",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

AU - Du, Guotong

AU - Zhao, Yongsheng

AU - Li, Xuemei

AU - Song, Junfeng

AU - Hah, Weihua

AU - Gao, Dingsan

AU - Wu, Shengli

AU - Devane, Gregory

AU - Stair, Kathleen A.

AU - Chang, R. P H

PY - 1997

Y1 - 1997

N2 - Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

AB - Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

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M3 - Conference article

AN - SCOPUS:0031335335

SN - 1092-8081

VL - 1

SP - 138

EP - 139

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)

Y2 - 10 November 1997 through 13 November 1997

ER -

Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

Abstract

ASJC Scopus subject areas

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