Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

M. Erdtmann, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Using low-pressure metalorganic chemical vapor deposition, we have grown GaInAs/InP QWIP structures on GaAs-coated Si substrate. First, the procedure to optimize the epitaxy of the InP buffer layer on Si substrate is given. Excellent crystallinity and a mirror-like surface morphology were obtained by using both a two-step growth process at the beginning of the InP buffer layer growth and several series of thermal cycle annealing throughout the InP buffer layer growth. Second, results of fabricated GaInAs/InP QWIPs on Si substrate are presented. At a temperature of 80 K, the peak response wavelength occurs at 7.4 μm. The responsivities of QWIPs on both Si and InP substrates with identical structures are equal up to biases of 1.5 V. At a bias of 3 V, the responsivity of the QWIPs on Si substrate is 1.0 A/W.

Original languageEnglish (US)
Pages (from-to)163-170
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4288
DOIs
StatePublished - Jan 1 2001
EventPhotodetectors: Materials and Devices VI - San Jose, CA, United States
Duration: Jan 22 2001Jan 24 2001

Keywords

  • GaInAs
  • InP
  • MOCVD
  • Optoelectronic integration
  • Quantum well infrared photodetector
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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