Keyphrases
Buffer Layer
50%
Crystallinity
16%
Epitaxy
16%
GaInAs
100%
Gallium Arsenide
16%
Growth Process
16%
InP Substrate
16%
Layer Growth
33%
Low Pressure
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Mirror-like
16%
Monolithic Integration
100%
Peak Response
16%
Quantum Well Infrared Photodetector
100%
QWIP-structure
16%
Responsivity
33%
Si Substrate
100%
Surface Morphology
16%
Thermal Cycle Annealing
16%
Two-step Growth
16%
Engineering
Buffer Layer
60%
Chemical Vapor Deposition
20%
Crystallinity
20%
Gallium Arsenide
20%
Growth Process
20%
Monolithic Integration
100%
Photometer
100%
Quantum Well
100%
Responsivity
40%
Si Substrate
100%
Surface Morphology
20%
Thermal Cycle
20%
Vapor Deposition
20%
Material Science
Buffer Layer
100%
Chemical Vapor Deposition
33%
Epitaxy
33%
Gallium Arsenide
33%
Photosensor
100%
Quantum Well
100%
Surface Morphology
33%