Abstract
We have developed a model to study photodetectors monolithically integrated with optical waveguides and we present the feasability of such compact devices. We report the first fabrication of a Ga0.47In0.53As photoconductor associated with a GaAlAs/GaAs rib waveguide grown on semi-insulating GaAs substrate, which needs only 100 μm to detect 90% of the optical signal.
Original language | English (US) |
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Pages (from-to) | 14-18 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1141 |
DOIs | |
State | Published - 1989 |
Externally published | Yes |
Event | 5th European Conference on Integrated Optics, ECIO 1989 - Paris, France Duration: Apr 24 1989 → Apr 28 1989 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering