Monolithically grown In x Ga 1-x As nanowire array on silicon tandem solar cells with high efficiency

Jae Cheol Shin*, Kyou Hyun Kim, Hefei Hu, Ki Jun Yu, John A. Rogers, Jian Min Zuo, Xiuling Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We demonstrate one-dimensional heteroepitaxy of In x Ga 1-x As nanowires in the entire composition range on Si (111) substrate for tandem solar cells with efficiencies that exceed the planar Si single junction cell fabricated using identical processes.

Original languageEnglish (US)
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages391-392
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: Oct 9 2011Oct 13 2011

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period10/9/1110/13/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Monolithically grown In <sub>x</sub> Ga <sub>1-x</sub> As nanowire array on silicon tandem solar cells with high efficiency'. Together they form a unique fingerprint.

Cite this