Monolithically Integrated Receiver Front End: In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier

Chu Liang Cheng Chang*, R. P H Chang, Benjamin Tell, Sandra M. Zima Parker, Y. Ota, G. P. Vella-Coleiro, R. C. Miller, John L. Zilko, B. L. Kasper, Kevin F. Brown-Goebeler, V. D. Mattera

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.

Original languageEnglish (US)
Pages (from-to)1439-1444
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume35
Issue number9
DOIs
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chang, C. L. C., Chang, R. P. H., Tell, B., Zima Parker, S. M., Ota, Y., Vella-Coleiro, G. P., Miller, R. C., Zilko, J. L., Kasper, B. L., Brown-Goebeler, K. F., & Mattera, V. D. (1988). Monolithically Integrated Receiver Front End: In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier. IEEE Transactions on Electron Devices, 35(9), 1439-1444. https://doi.org/10.1109/16.2576