Monte Carlo simulation of transport properties in wide gap Hg3Se2I2

Lujin Min, Zhifu Liu, J. A. Peters, Yihui He, Mercouri G. Kanatzidis, Jingchuan Zhu, Bruce W. Wessels

Research output: Contribution to journalArticlepeer-review


Hg3Se2I2 is a promising chalcohalide semiconductor for x- and γ-ray room-temperature semiconductors detectors. In addition to having a high density and wide bandgap of 2.15 eV, it also possesses a relatively high electron mobility. Using Ensemble Monte Carlo simulation, we explored its transport properties and underlying factors responsible for its carrier mobility. The parameters used in the Monte Carlo simulations were obtained from experimental measurements and density functional theory calculations. The simulations indicate that the semiconductor has a high electron mobility of the order of 172 0.16 cm2 V-1 s-1 at room temperature. Electron mobility in Hg3Se2I2 was insensitive to impurity concentration for values less than 1015 cm-3

Original languageEnglish (US)
Article number115003
JournalSemiconductor Science and Technology
Issue number11
StatePublished - Oct 1 2019


  • Hg-based semiconductors
  • photoconductivity
  • wide gap semiconductor
  • γ-ray detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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