MoO 2 as a thermally stable oxide electrode for dynamic random-access memory capacitors

Woongkyu Lee, Cheol Jin Cho, Woo Chul Lee, Cheol Seong Hwang, Robert P.H. Chang, Seong Keun Kim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Metallic MoO 2 is proposed as a new oxide electrode for dynamic random-access memory (DRAM) capacitors. Although noble metal oxide electrodes including RuO 2 and SrRuO 3 have attracted interest as capacitor electrodes, these materials have critical instability problems of ease-of-reduction during the subsequent annealing process. In contrast, MoO 2 shows excellent thermal stability of the structural and chemical properties even after annealing at 400 °C in both forming gas and O 2 atmospheres. In addition, MoO 2 electrodes induce the formation of a high temperature phase with a high dielectric constant, rutile TiO 2 , by atomic layer deposition at the relatively low temperature of 250 °C because of the structural homogeneity between MoO 2 and rutile TiO 2 . These results demonstrate that MoO 2 could be a promising electrode material for DRAM capacitors.

Original languageEnglish (US)
Pages (from-to)13250-13256
Number of pages7
JournalJournal of Materials Chemistry C
Issue number48
StatePublished - 2018

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry


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