Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale

Guennadi Evmenenko; Benjamin Stripe; Pulak Dutta

doi:10.1016/j.jcis.2011.04.073

Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale

Guennadi Evmenenko^*, Benjamin Stripe, Pulak Dutta

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Synchrotron X-ray reflectivity (XRR) was used to study the structure of thin films of polyhedral oligomeric silsesquioxanes (POSS) with side organic chains of different flexibility and containing terminal epoxy groups. POSS films were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. The XRR data show a variety of structural morphologies, including autophobic molecular monolayers and bilayers as well as uniform films. The role of conformational and energetic factors governing the development of different morphologies in a restricted geometry is discussed.

Original language	English (US)
Pages (from-to)	793-799
Number of pages	7
Journal	Journal of Colloid And Interface Science
Volume	360
Issue number	2
DOIs	https://doi.org/10.1016/j.jcis.2011.04.073
State	Published - Aug 15 2011

Funding

This work was supported by the US National Science Foundation under Grant No. DMR-1006432. XRR measurements were performed at the National Synchrotron Light Source on Beamline X6B, which is supported by the US Department of Energy.

Keywords

Molecular rearrangement
Polyhedral oligomeric silsesquioxanes
Specular X-ray reflectivity
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Colloid and Surface Chemistry

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10.1016/j.jcis.2011.04.073

Cite this

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title = "Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale",

abstract = "Synchrotron X-ray reflectivity (XRR) was used to study the structure of thin films of polyhedral oligomeric silsesquioxanes (POSS) with side organic chains of different flexibility and containing terminal epoxy groups. POSS films were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. The XRR data show a variety of structural morphologies, including autophobic molecular monolayers and bilayers as well as uniform films. The role of conformational and energetic factors governing the development of different morphologies in a restricted geometry is discussed.",

keywords = "Molecular rearrangement, Polyhedral oligomeric silsesquioxanes, Specular X-ray reflectivity, Thin films",

author = "Guennadi Evmenenko and Benjamin Stripe and Pulak Dutta",

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AU - Stripe, Benjamin

AU - Dutta, Pulak

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Y1 - 2011/8/15

N2 - Synchrotron X-ray reflectivity (XRR) was used to study the structure of thin films of polyhedral oligomeric silsesquioxanes (POSS) with side organic chains of different flexibility and containing terminal epoxy groups. POSS films were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. The XRR data show a variety of structural morphologies, including autophobic molecular monolayers and bilayers as well as uniform films. The role of conformational and energetic factors governing the development of different morphologies in a restricted geometry is discussed.

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KW - Molecular rearrangement

KW - Polyhedral oligomeric silsesquioxanes

KW - Specular X-ray reflectivity

KW - Thin films

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Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale

Abstract

Funding

Keywords

ASJC Scopus subject areas

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