Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale

Guennadi Evmenenko*, Benjamin Stripe, Pulak Dutta

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Synchrotron X-ray reflectivity (XRR) was used to study the structure of thin films of polyhedral oligomeric silsesquioxanes (POSS) with side organic chains of different flexibility and containing terminal epoxy groups. POSS films were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. The XRR data show a variety of structural morphologies, including autophobic molecular monolayers and bilayers as well as uniform films. The role of conformational and energetic factors governing the development of different morphologies in a restricted geometry is discussed.

Original languageEnglish (US)
Pages (from-to)793-799
Number of pages7
JournalJournal of Colloid And Interface Science
Volume360
Issue number2
DOIs
StatePublished - Aug 15 2011

Keywords

  • Molecular rearrangement
  • Polyhedral oligomeric silsesquioxanes
  • Specular X-ray reflectivity
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Colloid and Surface Chemistry

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