Morphological stability of strained epitaxial layers

Bruce W Wessels*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The morphological stability of strained-layer thin films is analyzed using classical nucleation theory. For the case where strain relaxation occurs by formation of coherent islands, the model predicts that the critical thickness for transition from two-dimensional (2D) to three dimensional (3D) growth depends inversely on the square of the misfit. The predicted dependence of critical thickness on misfit is in agreement with recent experimental studies on the heteroepitaxy of III-V compounds.

Original languageEnglish (US)
Pages (from-to)335-340
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume440
StatePublished - Dec 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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