Morphological stability of strained-layer semiconductors

B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The morphological stability of strained-layer semiconductors is analyzed for the case where strain relaxation occurs by formation of isolated, coherent islands. In the model, partial strain relaxation in the underlying strained-layer is taken into account. Using a mean-field approximation, the interaction energy is taken to be linearly proportional to the strain energy in the film. The model predicts that the critical thickness for island formation depends inversely on the square of the misfit. The predicted dependence of critical thickness on the misfit is in quantitative agreement with recent experimental studies on island nucleation for heteroepitaxial III-V compounds.

Original languageEnglish (US)
Pages (from-to)1056-1058
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number4
DOIs
StatePublished - 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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