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Morphological stability of strained-layer semiconductors
B. W. Wessels
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Corresponding author for this work
Materials Science and Engineering
Research output
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Contribution to journal
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Article
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peer-review
30
Scopus citations
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INIS
strains
100%
layers
100%
islands
100%
stability
66%
energy
66%
semiconductor materials
66%
relaxation
66%
thickness
66%
films
33%
interactions
33%
approximations
33%
vanadium compounds
33%
mean-field theory
33%
nucleation
33%
Earth and Planetary Sciences
Island
100%
Semiconductor
66%
Stability
66%
Model
66%
Experimental Study
33%
Nucleation
33%
Dependence
33%
Square
33%
Agreement
33%
Engineering
Strained Layer
100%
Critical Thickness
66%
Strain Relaxation
66%
Models
66%
Stability
66%
Interaction Energy
33%
Strain Energy
33%
Fields
33%
Physics
Atolls
100%
Semiconductor
66%
Model
66%
Stability
66%
Approximation
33%
Material Science
Semiconductor Material
66%
Liquid Films
33%