Morphology and crystalline perfection of InAs films on Si(100)

C. H. Choi*, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

InAs films were deposited from In and As4 fluxes on Si(100) substrates by ion-assisted deposition (IAD). The use of Ar ion irradiation during film nucleation improved the substrate coverage and crystalline perfection. The effect of As4-to-In flux ratio rAs and substrate temperature Ts on the nucleation, island coalescence, smoothening, and crystalline perfection of InAs films on Si(100) was studied using reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and X-ray diffraction. Complete substrate coverage was achieved at the lowest film thickness by using rAs ≈ 1 and Ts ≈ 380°C. Continuous InAs films that gave streaky, reconstructed RHEED patterns were obtained at thickness of ≈ 800 nm. It was also found that the presence of anti-phase domains in InAs films led to residual surface roughness in thick films. The typical X-ray rocking curve full width at half-maximum was ≈ 3000 arc sec at a film thickness of 0.4 μm.

Original languageEnglish (US)
Pages (from-to)381-387
Number of pages7
JournalJournal of Crystal Growth
Volume137
Issue number3-4
DOIs
StatePublished - Apr 1 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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