TY - JOUR
T1 - Morphology and crystalline perfection of InAs films on Si(100)
AU - Choi, C. H.
AU - Barnett, S. A.
N1 - Funding Information:
The authors gratefully acknowledge the financial support of the National Science Foundation through the Northwestern University Materials Research Center, grant No. DMR 9120521.
PY - 1994/4/1
Y1 - 1994/4/1
N2 - InAs films were deposited from In and As4 fluxes on Si(100) substrates by ion-assisted deposition (IAD). The use of Ar ion irradiation during film nucleation improved the substrate coverage and crystalline perfection. The effect of As4-to-In flux ratio rAs and substrate temperature Ts on the nucleation, island coalescence, smoothening, and crystalline perfection of InAs films on Si(100) was studied using reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and X-ray diffraction. Complete substrate coverage was achieved at the lowest film thickness by using rAs ≈ 1 and Ts ≈ 380°C. Continuous InAs films that gave streaky, reconstructed RHEED patterns were obtained at thickness of ≈ 800 nm. It was also found that the presence of anti-phase domains in InAs films led to residual surface roughness in thick films. The typical X-ray rocking curve full width at half-maximum was ≈ 3000 arc sec at a film thickness of 0.4 μm.
AB - InAs films were deposited from In and As4 fluxes on Si(100) substrates by ion-assisted deposition (IAD). The use of Ar ion irradiation during film nucleation improved the substrate coverage and crystalline perfection. The effect of As4-to-In flux ratio rAs and substrate temperature Ts on the nucleation, island coalescence, smoothening, and crystalline perfection of InAs films on Si(100) was studied using reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and X-ray diffraction. Complete substrate coverage was achieved at the lowest film thickness by using rAs ≈ 1 and Ts ≈ 380°C. Continuous InAs films that gave streaky, reconstructed RHEED patterns were obtained at thickness of ≈ 800 nm. It was also found that the presence of anti-phase domains in InAs films led to residual surface roughness in thick films. The typical X-ray rocking curve full width at half-maximum was ≈ 3000 arc sec at a film thickness of 0.4 μm.
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U2 - 10.1016/0022-0248(94)90974-1
DO - 10.1016/0022-0248(94)90974-1
M3 - Article
AN - SCOPUS:0028419285
SN - 0022-0248
VL - 137
SP - 381
EP - 387
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -