Morphology of twinned GaN grown on (11·0) sapphire substrates

T. Kato*, P. Kung, A. Saxler, C. J. Jun, H. Ohsato, M. Razeghi, T. Okuda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

Original languageEnglish (US)
Pages (from-to)227-229
Number of pages3
JournalSolid-State Electronics
Issue number2 SPEC. ISS.
StatePublished - Feb 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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