GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry