Morphology of twinned GaN grown on (11·0) sapphire substrates

T. Kato; P. Kung; A. Saxler; C. J. Jun; H. Ohsato; M. Razeghi; T. Okuda

doi:10.1016/s0038-1101(96)00205-5

Morphology of twinned GaN grown on (11·0) sapphire substrates

T. Kato^*, P. Kung, A. Saxler, C. J. Jun, H. Ohsato, M. Razeghi, T. Okuda

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

Original language	English (US)
Pages (from-to)	227-229
Number of pages	3
Journal	Solid-State Electronics
Volume	41
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/s0038-1101(96)00205-5
State	Published - Feb 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/s0038-1101(96)00205-5

Cite this

@article{90bc01c106684f83829393c8767c69e7,

title = "Morphology of twinned GaN grown on (11·0) sapphire substrates",

abstract = "GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.",

author = "T. Kato and P. Kung and A. Saxler and Jun, {C. J.} and H. Ohsato and M. Razeghi and T. Okuda",

year = "1997",

month = feb,

doi = "10.1016/s0038-1101(96)00205-5",

language = "English (US)",

volume = "41",

pages = "227--229",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Morphology of twinned GaN grown on (11·0) sapphire substrates

AU - Kato, T.

AU - Kung, P.

AU - Saxler, A.

AU - Jun, C. J.

AU - Ohsato, H.

AU - Razeghi, M.

AU - Okuda, T.

PY - 1997/2

Y1 - 1997/2

N2 - GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

AB - GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

UR - http://www.scopus.com/inward/record.url?scp=0031078582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031078582&partnerID=8YFLogxK

U2 - 10.1016/s0038-1101(96)00205-5

DO - 10.1016/s0038-1101(96)00205-5

M3 - Article

AN - SCOPUS:0031078582

VL - 41

SP - 227

EP - 229

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2 SPEC. ISS.

ER -

Morphology of twinned GaN grown on (11·0) sapphire substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this