Morphology of twinned GaN grown on (11·0) sapphire substrates

T. Kato; P. Kung; A. Saxler; C. J. Jun; H. Ohsato; M. Razeghi; T. Okuda

doi:10.1016/s0038-1101(96)00205-5

Morphology of twinned GaN grown on (11·0) sapphire substrates

T. Kato^*, P. Kung, A. Saxler, C. J. Jun, H. Ohsato, M. Razeghi, T. Okuda

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

Original language	English (US)
Pages (from-to)	227-229
Number of pages	3
Journal	Solid-State Electronics
Volume	41
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/s0038-1101(96)00205-5
State	Published - Feb 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/s0038-1101(96)00205-5

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title = "Morphology of twinned GaN grown on (11·0) sapphire substrates",

abstract = "GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.",

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T1 - Morphology of twinned GaN grown on (11·0) sapphire substrates

AU - Kato, T.

AU - Kung, P.

AU - Saxler, A.

AU - Jun, C. J.

AU - Ohsato, H.

AU - Razeghi, M.

AU - Okuda, T.

PY - 1997/2

Y1 - 1997/2

N2 - GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

AB - GaN epitaxial thin films have been grown on (11·0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10·0) oriented, and the other is a hexagonal pyramid shape which is (00·1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00·1) and (00·1) basal planes and pyramidal planes. They are twinned with (00·1) twin plane. A structure model of the twinned bow-tie crystal is also proposed.

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Morphology of twinned GaN grown on (11·0) sapphire substrates

Abstract

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