Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y

G. W. Charache*, D. M. DePoy, J. E. Raynolds, P. F. Baldasaro, K. E. Miyano, T. Holden, F. H. Pollak, P. R. Sharps, M. L. Timmons, C. B. Geller, W. Mannstadt, R. Asahi, A. J. Freeman, W. Wolf

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Degenerately doped (> 1019cm-3) n-type InxGa1-xAs (x∼0.67) and InPyAs1-y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*<0.2) and the demonstrated ability to incorporate n-type dopants into the high 1019 cm-3 range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N = 5× 1019 cm-3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations.

Original languageEnglish (US)
Pages (from-to)452-458
Number of pages7
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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