MoS2-capped Cu:XS nanocrystals: A new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

Yuan Li, Akshay A. Murthy, Jennifer G. Distefano, Hee Joon Jung, Shiqiang Hao, Cesar J. Villa, Chris Wolverton, Xinqi Chen*, Vinayak P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Heterostructuring of different transition metal dichalcogenides (TMDs) leads to interesting band alignment and performance improvement, and thus enables new routes for the development of materials for next-generation semiconductor electronics. Herein, we introduce a new strategy for the design and synthesis of functional TMD heterostructures. The representative product, molybdenum disulfide-capped copper sulfide (CuxS@MoS2, 1.8 < x < 2.0), is typically obtained by chemical vapor deposition of cap-like MoS2 layers on CuxS nanocrystals, yielding the formation of a sharp, clean heterojunction interface. The heterostructures exhibit strong light-matter interactions over a broadband range, with interesting band alignment for separating photocarriers and mediating charge transfer. A phototransistor made from CuxS@MoS2 heterostructures shows particularly high photoresponse for near infrared light, which is enabled by the heterojunction of MoS2 with a small band gap semiconductor as well as the plasmonic enhancement from the CuxS nanocrystals. Our study paves a way for the development of new TMD heterostructures towards achieving functional electronics and optoelectronics.

Original languageEnglish (US)
Pages (from-to)587-594
Number of pages8
JournalMaterials Horizons
Issue number3
StatePublished - Mar 2019

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Process Chemistry and Technology
  • Electrical and Electronic Engineering

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