@inproceedings{a7be5a53776e4d1684be45642897cc0a,
title = "MTJ variation monitor-assisted adaptive MRAM write",
abstract = "Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and Me RAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects optimized write pulse for STT-RAM and MeRAM to overcome ambient process and temperature variation. To enable the adaptive write, we design specific MTJ-based variation monitor, which precisely senses process and temperature variation. The monitor is over 10X faster, 5X more energy-efficient, and 20X smaller compared with conventional thermal monitors of similar accuracy. With adaptive write, the write latency of STT-RAM and MeRAM cache are reduced by up to 17% and 59% respectively, and application run time is improved by up to 41%.",
keywords = "Adaptive write, MTJ, MeRAM, Process variation, STT-RAM, Temperature variation, Thermal monitor",
author = "Shaodi Wang and Hochul Lee and Cecile Grezes and Pedram Khalili and Wang, {Kang L.} and Puneet Gupta",
note = "Publisher Copyright: {\textcopyright} 2016 ACM. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 53rd Annual ACM IEEE Design Automation Conference, DAC 2016 ; Conference date: 05-06-2016 Through 09-06-2016",
year = "2016",
month = jun,
day = "5",
doi = "10.1145/2897937.2897979",
language = "English (US)",
series = "Proceedings - Design Automation Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the 53rd Annual Design Automation Conference, DAC 2016",
address = "United States",
}