MTJ variation monitor-assisted adaptive MRAM write

Shaodi Wang, Hochul Lee, Cecile Grezes, Pedram Khalili, Kang L. Wang, Puneet Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and Me RAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects optimized write pulse for STT-RAM and MeRAM to overcome ambient process and temperature variation. To enable the adaptive write, we design specific MTJ-based variation monitor, which precisely senses process and temperature variation. The monitor is over 10X faster, 5X more energy-efficient, and 20X smaller compared with conventional thermal monitors of similar accuracy. With adaptive write, the write latency of STT-RAM and MeRAM cache are reduced by up to 17% and 59% respectively, and application run time is improved by up to 41%.

Original languageEnglish (US)
Title of host publicationProceedings of the 53rd Annual Design Automation Conference, DAC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781450342360
StatePublished - Jun 5 2016
Event53rd Annual ACM IEEE Design Automation Conference, DAC 2016 - Austin, United States
Duration: Jun 5 2016Jun 9 2016

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X


Other53rd Annual ACM IEEE Design Automation Conference, DAC 2016
Country/TerritoryUnited States


  • Adaptive write
  • MTJ
  • MeRAM
  • Process variation
  • Temperature variation
  • Thermal monitor

ASJC Scopus subject areas

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modeling and Simulation


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