Multi-color 4-20 μm InP-based quantum well infrared photodetectors

Christopher Jelen*, Steven Boyd Slivken, Gail J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

New designs are demonstrated which combined InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular beam epitaxy in order to tune the wavelength of lattice-matched quantum well infrared photodetectors (QWIP) over the range from 4-20 microns. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45° facet coupled illumination responsivity or R = 0.37 A/W and detectivity of D* λ = 1×10 9 cm √Hz W -1 at T = 77 K, for cutoff wavelength λ c = 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In 0.52 Ga 0.21 Al 0.27 As/InP heterojunctions.

Original languageEnglish (US)
Pages (from-to)147-154
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
StatePublished - Jan 1 1999
EventProceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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