Electron transport properties of molecular beam epitaxy grown InSb on GaAs substrates are studied using the conventional Hall effect and the mobility spectrum technique. The latter technique reveals the existence of at least three different conducting channels in InSb. Our analysis of the Hall data and the mobility spectrum shows that the conduction in InSb is determined by a highly dislocated interfacial layer between the InSb layer and the GaAs substrate, a high mobility bulk-like InSb layer, and, possibly, a surface layer.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC|
|State||Published - Jan 1 1999|
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