Multi-layer conduction in epitaxial InSb grown on GaAs substrates

Mohamed Ahoujja*, William C. Mitchel, Eric Michel, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Electron transport properties of molecular beam epitaxy grown InSb on GaAs substrates are studied using the conventional Hall effect and the mobility spectrum technique. The latter technique reveals the existence of at least three different conducting channels in InSb. Our analysis of the Hall data and the mobility spectrum shows that the conduction in InSb is determined by a highly dislocated interfacial layer between the InSb layer and the GaAs substrate, a high mobility bulk-like InSb layer, and, possibly, a surface layer.

Original languageEnglish (US)
Pages (from-to)177-180
Number of pages4
JournalIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Engineering(all)

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