Keyphrases
Memristor
100%
Monolayer Molybdenum Disulfide
100%
Multi-terminal
100%
Memtransistors
100%
Two-terminal
50%
Transistor
37%
Molybdenite
25%
Charge Transport
12%
Long-term Potentiation
12%
Synaptic
12%
Synapse
12%
Order of Magnitude
12%
Synaptic Plasticity
12%
Human Brain
12%
Complex Function
12%
Seamless Integration
12%
Conductance
12%
Two Dimensional Materials
12%
Scalable Fabrication
12%
Circuit Element
12%
Gate Tunability
12%
Gate-tunable
12%
Switching Ratio
12%
Fabrication Methods
12%
Data Storage
12%
Neural Function
12%
Transport Measurements
12%
Neuromorphic Computing
12%
Field-effect Transistors
12%
Modulatory
12%
Learning Behavior
12%
Experimental Realization
12%
Device Modeling
12%
Long-term Retention
12%
Postsynaptic Neuron
12%
Measurement Modeling
12%
Three-terminal
12%
High Endurance
12%
Floating Gate
12%
Schottky Barrier Height
12%
Induced Motion
12%
Passive Component
12%
Molybdenum Disulfide MoS2
12%
Voltage Pulse
12%
Floating Electrode
12%
Nanoionics
12%
In Situ Scanning Probe Microscopy
12%
Transport Device
12%
Heterosynaptic
12%
Writing Time
12%
Multi-terminal Device
12%
Resistive State
12%
Flash Memory
12%
Two-dimensional MoS2
12%
Nonvolatile Resistive Memory
12%
Bit Data
12%
Resistive Switching
12%
Cycling Endurance
12%
Neural Learning
12%
Memristor Effect
12%
Defect Kinetics
12%
Memristive Switching
12%
Neuromorphic Learning
12%
Multi-bit
12%
Individual Resistance
12%
Engineering
Polycrystalline
100%
Monolayers
100%
Molybdenum Disulfide
100%
Two Dimensional
16%
Charge Transport
16%
Field-Effect Transistor
16%
Resistive
16%
Data Bit
16%
Passive Networks
16%
Barrier Height
16%
Postsynaptic Neuron
16%
Circuit Element
16%
Resistive Random Access Memory
16%
Individual Resistance
16%
Schottky Barrier
16%
Floating Gate
16%
Scanning Probe Microscopy
16%
Realization
16%
2D Material
16%
Human Brain
16%
Flash Memory
16%
Material Science
Monolayers
100%
Transistor
100%
Molybdenum
100%
Field Effect Transistors
33%
Electronic Circuit
33%
Schottky Barrier
33%
Device Modeling
33%
Two-Dimensional Material
33%
Resistive Random-Access Memory
33%
Neuromorphic Computing
33%
Physics
Polycrystalline
100%
Memristor
100%
Synapse
11%
Schottky Barrier Height
11%
2D Material
11%
Resistive Switching
11%
Physics
11%
Data Storage
11%
Field Effect Transistor
11%
Charge Transfer
11%